IWJT2018  Mar.8- 9, 2018 Shanghai, China

18^th International Workshop on Junction Technology
Fudan University

Papers collected in IWJT have been indexed by EI database (Compendex)!

The 18^th International Workshop on Junction Technology (IWJT2018) will be held on March 8 - 9, 2018 in Shanghai, China. The date for IWJT-2018 is scheduled to connect with the China Semiconductor Technology International Conference (CSTIC) 2018 which will be held on March 11-12, 2018 in Shanghai too.

The IWJT, started in 2000 and was held annually in Japan or China, is an open forum focused on the needs and interest of the community of a junction formation technology in semiconductors. At the past IWJTs, a number of eminent and experienced scientists and engineers from Asia, America, and Europe presented their latest results on junction technology. The workshop will provide a good opportunity for researchers and engineers to present their new research results, and exchange ideas with leading scientists in this field.

(Group Photo, IWJT2018, Mar. 8, 2018)

On site registration:

Room 102, 1^st floor, East Auxiliary Building Affiliated to Guanghua Building

15:00-18:00, Mar. 7, 2018

08:00-11:30, Mar. 8, 2018

08:00-11:30, Mar. 9, 2018

Only cash is acceptable. No payment by bank card is available.

Overview Schedule

 

	Mar.  8, Thursday	Mar. 9, Friday
Morning	Opening & Plenary Session  (08:30-10:30)  Characterization for Shallow Junction (10:45-12:00)  Registration (8:00-11:30)	Doping Technology (8:30-10:00)  Metal/Semiconductor Contact Technology for CMOS (10:15-11:45)  Registration (8:00-11:30)
Lunch	Danyuan restaurant, 3rd floor (12:00-13:15)	Danyuan restaurant, 3rd floor (12:00-13:15)
Afternoon	Annealing Technology (13:30-15:15)   Junction and Contact Technologies for Compound Semiconductors (15:30-17:30)	Contact and Junction Technologies for photon-electron interaction (13:30-15:45)  Modeling and Simulation (16:00-16:45)  Junction and Process Technology for Novel MOS Device Structures (16:45-18:00)
Evening	Danyuan restaurant, 3rd floor Reception (18:00-19:30)	Danyuan restaurant, 3rd floor Banquet (18:00-19:30)

Final Program

(20180228)

Mar. 8 (Thur.) 08:30-09:00	Opening                       (Room 102, 1st floor, East Auxiliary Building Affiliated to Guanghua Building)
Mar. 8 (Thur.) 09:00-10:30	Plenary Session (Room 102, 1st floor, East Auxiliary Building Affiliated to Guanghua Building)
Co-Chairs:	Bing-Zong Li, Fudan University, China Mizuno Bunzi, Panasonic, Japan
K1	Advanced Implant Application for 7nm and Beyond	1
9:00	Wei (David) Zou, Kyu-Ha Shim and Todd Henry
(Keynote)	AMAT, USA
K2	Impact of the end of CMOS miniaturization on ICT and the world after that	2
9:45	Hiroshi Iwai
(Keynote)	Tokyo Institute of Technology, Japan
Coffee Break (10:30-10:45)
Mar. 8 (Thur.) 10:45-12:00	Characterization for Shallow Junction (Room 102, 1st floor, East Auxiliary Building Affiliated to Guanghua Building)
Chair:	Kyoichi Suguro, Toshiba, Japan
S01-01	Analyses of 3D Atomic Arrangements of Impurity Atoms Doped in Silicon by Spectro-Photoelectron Holography Technique	7
10:45	Kazuo Tsutsui1, Tomohiro Matsushita2, Takayuki Muro2, Yoshitada Morikawa3, Kotaro Natori4, Takuya Hoshii4, Kuniyuki Kakushima4, Hitoshi Wakabayashi4, Kouichi Hayashi5, Fumihiko Matsui6, and Toyohiko Kinoshita2
(Invited)	1Institute of Innovative Research, Tokyo Institute of Technology, Japan; 2 Japan Synchrotron Radiation Research Institute (JASRI), Japan; 3 Osaka University, Japan; 4School of Engineering, Tokyo Institute of Technology, Japan; 5Nagoya Institute of Technology, Japan; 6 Nara Institute of Science and Technology, Japan
S01-02	Junction profiling on hot carrier stressed device by dual lens electron holography and scanning capacitance microscopy	13
11:15	Y.Y. Wang 1, J. Nxumalo1, D. Ioannou1, A. Katnani1, J. Jeon1, K. Bandy1, M. Mcdonald1, J. Bruley2
	1. Globalfoundires Inc., USA; 2. IBM T. J. Watson Research Center, USA
S01-03	Characterizing Junction Profiles in Ge Photodetectors using Scanning Capacitance Microscopy (SCM) and Electron Holography	17
11:30	J. N. Nxumalo1, Y.Y. Wang2, M. Iwatake2, C. Molella1, A. Katnani2, J. Orcutt3, J. Ayala2, K. Nummy2
	1GlobalFoundries Inc., USA;2GlobalFoundries Inc., USA;3 IBM Thomas J. Watson Research Center, USA
S01-04	Effect of Stress on Activation during the Formation of np Junction in Co-Implanted Germanium	21
11:45	Nur Nadhirah Rashid1, Umar Abdul Aziz1, Siti Rahmah Aid1, Suwa Akira2, Hiroshi Ikenoue2, Fang Xie3 and Anthony Centeno4
	1Universiti Teknologi, Malaysia;2Kyushu University, Japan;3Imperial College London, United Kingdom;4Xi’an Jiaotong Liverpool University, China
Mar. 8 (Thur.) 13:30-15:15	Annealing Technology (Room 102, 1st floor, East Auxiliary Building Affiliated to Guanghua Building)
Co-Chairs:	Paul J. Timans, Mattson Thermal Products GmbH, Germany S. Boninelli, IMM-CNR, Italy
S02-01	Activation of High-temperature-implanted Phosphorus Atoms in 4H-SiC by Atmospheric Pressure Thermal Plasma Jet Annealing	24
13:30	H. Hanafusa and S. Higashi
(Invited)	Hiroshima University, Japan
S02-02	Activation Trends in Millisecond Annealing of Heavy n-Type Doping of Silicon	28
14:00	Paul J. Timans
(Invited)	Mattson Thermal Products GmbH, Germany
S02-03	Damage recovery and strain induced by Phosphorous in Laser Annealed Ge	32
14:30	S. Boninelli1, and F. Cristiano2
(Invited)	1IMM-CNR, Italy; 2LAAS-CNRS, France
S02-04	High Activation Reaching Supersaturation Achieved by Short-Duration Flash Lamp Annealing	33
15:00	Hideaki Tanimura, Kenji Inoue, Hikaru Kawarazaki, Takahiro Yamada, Kazuhiko Fuse, Takayuki Aoyama, Shinichi Kato and Ippei Kobayashi
	SCREEN Semiconductor Solutions Co., Ltd., Japan
Coffee Break (15:15-15:30)
Mar. 8 (Thur.) 15:30-17:30	Junction and Contact Technologies for Compound Semiconductors (Room 102, 1st floor, East Auxiliary Building Affiliated to Guanghua Building)
Co-Chairs:	Hongyu Yu, Southern University of Science and Technology, China Philippe Rodriguez, Univ. Grenoble Alpes, France
S03-01	Au-based and Au-free Ohmic Contacts to AlGaN/GaN Structures on Silicon or Sapphire Substrates	37
15:30	Wenmao Li1,2, Jian Zhang3, Robert Sokolovskij1,2,4,5, Yumeng Zhu1,2, Yongle Qi1,2, Xinpeng Lin1,2, Jingyi Wu1,2, Lingli Jiang1,2, Hongyu Yu1,2
(Invited)	1 Southern University of Science and Technology, China; 2Shenzhen Key Laboratory of the Third Generation Semi-conductor, China; 3Fudan University, China; 4Delft University of Technology, the Netherlands; 5State Key Laboratory of Solid State Lighting, China
S03-02	CMOS-Compatible Contact Technology for Si Photonics	41
16:00	Philippe Rodriguez1, Elodie Ghegin2, and Fabrice Nemouchi3
(Invited)	1Univ. Grenoble Alpes, France; 2 CEA-LETI, France; 3 STMicroelectronics, France
S03-03	Characterization of b-Ga2O3 Schottky Barrier Diodes	47
16:30	T. Kaneko1, I. Muneta1, T. Hoshii1, H. Wakabayashi1, K. Tsutsui2, H. Iwai2, K. Kakushima1
	1School of Engineering, Tokyo Institute of Technology, Japan; 2Institute of Innovative Research, Tokyo Institute of Technology, Japan
S03-04	Effect of Deep Level Traps on the I-V and C-V Characteristics of InP/InGaAs Heterojunction	50
16:45	Man-Li Zhao, Hong-Liang Lu, Yu-Ming Zhang, Yi-Men Zhang, Xiao-Hong Zhao
	Xidian University, China
S03-05	The effect of ZnO Interface Passivation Layer on Leakage Current Mechanisms and Band Alignment for ZrO2/In0.2Ga0.8As Metal Oxide Semiconductor Capacitor	54
17:00	TongYang, Hong-liang Lu, Chen Liu, Wei-jian Yu, Yu-ming Zhang, Yi-men Zhang
	Xidian University, China
S03-06	Optimized transport properties of GaN MISHEMTs with thin AlN interlayer	59
17:15	Qianlan Hu, Sichao Li, Tiaoyang Li, Xin Wang, and Yanqing Wu
	Huazhong University of Science and Technology, China
Mar. 9 (Fri.) 08:30-10:00	Doping Technology (Room 102, 1st floor, East Auxiliary Building Affiliated to Guanghua Building)
Chair:	Hiro Ito, AMAT, Japan
S04-01	H2 PLAD Hydrogenation Process on 3D NAND Array Poly-Si Access Devices	61
8:30	Shu Qin
(Invited)	QinTek, Co., USA
S04-02	Monolayer doping and other strategies in high surface-to-volume ratio silicon devices	65
9:00	Ray Duffy1, Noel Kennedy2, Gioele Mirabelli1, Emmanuele Galluccio1, Paul K. Hurley1,2, Justin D. Holmes2,3, and Brenda Long2
(Invited)	1 Tyndall National Institute, Ireland; 2 University College Cork, Ireland. 3 Trinity College Dublin, Ireland.
S04-03	Enhancing Phosphorous Doping Level on Ge by Sb co-Doping with Non-Beamline Implantation Methods	71
9:30	Chuck Paeng, He Zhang, Bodo Kalkofen*, and YS Kim
	Lam Research Corp., USA; *U. Magdeburg Otto-von-Guericke
S04-04	Atomic layer deposited solid sources for doping of high aspect ratio semiconductor structures	75
9:45	Bodo Kalkofen1, Mindaugas Šilinskas1, Marco Lisker2, Y. S. Kim3, and Edmund P. Burte1
	1 Otto von Guericke University, Germany;2 IHP, Germany;3 Lam Research Corporation, USA
Coffee Break (10:00-10:15)
Mar. 9 (Fri.) 10:15-11:45	Metal/Semiconductor Contact Technology for CMOS (Room 102, 1st floor, East Auxiliary Building Affiliated to Guanghua Building)
Co-Chairs:	Kuniyuki Kakushima, Tokyo Institute of Technology, Japan Hao Yu, IMEC, Belgium
S05-01	On the manifestation of Ge Pre-amorphization Implantation (PAI) Impact on Both the Formation of Ultrathin TiSix and the Specific Contact Resistivity in TiSix/n-Si Contacts for sub-16/14 nm nodes and beyond	79
10:15	Jun Luoa,b, Shujuan Maoa,b, Jing Xua, Guilei Wanga, Dan Zhanga,b, Xue Luoa,b, Ningyuan Duana,b, Shi Liua, Wenwu Wanga,b, Dapeng Chena, Junfeng Lia, Chao Zhaoa,b, Tianchun Yea,b
(Invited)	a Institute of Microelectronics, Chinese Academy of Sciences, China; bUniversity of Chinese Academy of Sciences (UCAS), China
S05-02	Titanium (Germano-)Silicides Featuring 10-9 Ω∙cm2 Contact Resistivity and Improved Compatibility to Advanced CMOS Technology	80
10:45	Hao Yu1,2, Marc Schaekers1, Soon Aik Chew1, Jean-Luc Everaert1, Naoto Horiguchi1, Dan Mocuta1, Nadine Collaert1, Kristin De Meyer1,2
(Invited)	1Imec, Belgium; 2K. U. Leuven, Belgium
S05-03	Improved thermal stability of Al/TiO2/n-Ge ohmic contact by inserting single layer graphene	85
11:15	Yi Zhang, Genquan Han, Jiabo Chen, Yan Liu, Jincheng Zhang, and Yue Hao
	Xidian University, China.
S05-04	Effect of platinum interlayer on the thermal stability improvement of nickel stanogermanide	88
11:30	Weijun Wan1,2, Wei Ren1, Xiaoran Meng2,3, Yunxia Ping3, Xing Wei2, Zhongying Xue2, Wenjie Yu2, Miao Zhang2, Zengfeng Di2, Bo Zhang2
	1Shanghai University, China;2Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, China;3Shanghai University of Engineering Science, China
Mar. 9 (Fri.) 13:30-15:45	Contact and Junction Technologies for photon-electron interaction (Room 102, 1st floor, East Auxiliary Building Affiliated to Guanghua Building)
Co-Chairs:	Kenji Araki, Toyota Technological Institute,  Japan Hitoshi Wakabayashi, Tokyo Institute of Technology, Japan
S06-01	Novel photodetector based on FD-SOI substrate with interface coupling effect	91
13:30	J. Wan1, JN. Deng1, XY. Cao1, H. B. Liu1, B. R. Lu1, Y. F. Chen1, A. Zaslavsky2, S. Cristoloveanu3 and M. Bawedin3
(Invited)	1Fudan University, China; 2Brown University, USA; 3IMEP-LAHC, France
S06-02	Opportunities for breaking an energy generation limit of photovoltaic using multijunction and super-multijunction cells	95
14:00	Kenji Araki, Kan-Hua Lee, and Masafumi Yamaguchi,
(Invited)	Toyota Technological Institute,  Japan
S06-03	Light Plastic Integrated Micro CPV Module: PIC with Three-Junction PV cells	99
14:30	Michihiko Takase, Masaharu Terauchi, Nobuhiko Hayashi, Hikaru Nishitani, Takuji Inohara, Youichirou Aya, Shutetsu Kanayama and Bunji Mizuno
(Invited)	Panasonic Corporation, Japan
S06-04	Interfacial passivation by LiF or PbF2 for high efficiency perovskite solar cell	102
15:00	Yiqiang Zhan
(Invited)	Fudan University, China
S06-05	Photodetector Based on Silicon-on-Insulator with High Responsivity	103
15:30	X. Y. Cao1,2, HB.Liu1, JN.Deng1, WS.Lin2,and J. Wan1
	1Fudan University, China;2 Shanghai University of Engineering Science, China
Coffee Break (15:45-16:00)
Mar. 9 (Fri.) 16:00-16:45	Modeling and Simulation (Room 102, 1st floor, East Auxiliary Building Affiliated to Guanghua Building)
Chair:	Dong-Ping Wu, Fudan University, China
S07-01	Parasitic Resistance Modeling and Optimization for 10nm-node FinFET	107
16:00	Xicheng Duan, Peng Lu, Weicong Li, Jason C.S. Woo
	University of California, USA
S07-02	Simulation of Ge/(Si)GeSn Hetero-junction Tunnel FETs with Suppressed Ambipolar Current6	111
16:15	Yongwang Zhang, Suyuan Wang, Jun Zheng, Chunlai Xue, Chuanbo Li, Yuhua Zuo, Buwen Cheng, Qiming Wang
	Institute of Semiconductors, Chinese Academy of Sciences and University of Chinese Academy of Sciences
S07-03	Thermal Failure and Voltage Overshoot Models for Diode Behavior under Electrostatic Discharge Stresses	115
16:30	Hang Li1, Yuanzhong Zhou2, Meng Miao1, Javier A. Salcedo2, Jean-Jacques Hajjar2, and Kalpathy B. Sundaram1
	1University of Central Florida, USA;2Analog Devices, Inc., USA
Mar. 9 (Fri.) 16:45-18:00	Junction and Process Technology for Novel MOS Device Structures (Room 102, 1st floor, East Auxiliary Building Affiliated to Guanghua Building)
Chair:	Jing Wan, Fudan University, China
S08-01	Gate stack and Ni(SiGeSn) metal contacts formation on low bandgap strained (Si)Ge(Sn) semiconductors	119
16:45	D. Buca1, C. Schulte-Braucks1, N. von den Driesch1, A. T. Tiedemann1, U. Breuer2, J.M. Hartmann3, P. Zaumseil4, S. Mantl1 and Q.T. Zhao1
(Invited)	1Peter Grünberg Institute (PGI 9) and JARA-FIT, Forschungszentrum, Germany; 2Central Division of Analytical Chemistry (ZCH), Forschungszentrum, Germany;3 CEA-LETI, France; 4 IHP, Germany
S08-02	High-performance heterojunctions based on 2D semiconductors	120
17:15	Mingqiang Huang, Xiong Xiong and Yanqing Wu
(Invited)	Huazhong University of Science and Technology, China
S08-03	Highly Selective Etch of Silicon Dioxide with Tungsten Hard Mask Deposited by PVD Process	122
17:45	Yuanhui Fang, Jian Zhang, and Yu-Long Jiang
	Fudan University, China

Call for Papers

(PDF)

Important Dates

Deadline for Camera-Ready Full-Length Paper Submission : Jan. 31, 2018

Notification of Regular Paper Acceptance: Feb. 15, 2018

Deadline for Late News Submission Extended: Jan. 31, 2018 submission at web-site

Email submission with a cover letter to iwjt@fudan.edu.cn is preferred.

Workshop Scope
(Papers are solicited in, but not limited to the following)

• Doping Technology --- Ion implantation, plasma doping, gas and solid doping

• Annealing Technology --- Rapid thermal process, laser annealing, flash annealing, SPE, lattice damage and defects

• Junction Technology for Novel CMOS Device Structures --- Junction for SOI, strained Si, SiGe, Ge, Schottky barrier S/D MOSFET, FinFET(Tri-gate FET), and bonding junctions

• Silicide and Contact Technology for CMOS --- Silicide materials and salicide technology, elevated S/D, low barrier contact, surface pre-treatment

• Junction and Contact Technologies for Compound Semiconductors and Quantum Devices --- Schottky and ohmic contacts to wide bandgap compound semiconductors, junction and contact technologies for carbon nanotube, graphene, 2D material and other 2D or nano-, quantum devices, hetero-junction devices

• Contact and Junction Technologies for Energy Harvesting Devices---solar cells

• Characterization for Shallow Junction --- Physical and electrical characterization of ultra-shallow junction

• Modeling and Simulation --- Modeling and simulation of ultra-shallow junction formation of CMOS

• Equipment, Materials and Substrates for Junction Technology