IWJT2018  Mar.8- 9, 2018 Shanghai, China

18th International Workshop on Junction Technology
Fudan University


 

 

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IWJT History
 
 
Last update:
Feb. 22, 2018



The 18th International Workshop on Junction Technology (IWJT2018) will be held on March 8 - 9, 2018 in Shanghai, China. The date for IWJT-2018 is scheduled to connect with the China Semiconductor Technology International Conference (CSTIC) 2018 which will be held on March 11-12, 2018 in Shanghai too.

The IWJT, started in 2000 and was held annually in Japan or China, is an open forum focused on the needs and interest of the community of a junction formation technology in semiconductors. At the past IWJTs, a number of eminent and experienced scientists and engineers from Asia, America, and Europe presented their latest results on junction technology. The workshop will provide a good opportunity for researchers and engineers to present their new research results, and exchange ideas with leading scientists in this field.

 

Advance Program

(20180222)

 

Date

Start Time

SID

Title

Authors

Affiliations

Mar. 8

9:00

K1

Advanced Implant Application for 7nm and Beyond

Wei (David) Zou, Kyu-Ha Shim and Todd Henry

AMAT, USA

Mar. 8

9:45

K2

Impact of the end of CMOS miniaturization on ICT and the world after that

Hiroshi Iwai

Tokyo Institute of Technology, Japan

Mar. 8

10:30

Coffee Break

Mar. 8

10:45

S01-01

Analyses of 3D Atomic Arrangements of Impurity Atoms Doped in Silicon by Spectro-Photoelectron Holography Technique

Kazuo Tsutsui1, Tomohiro Matsushita2, Takayuki Muro2, Yoshitada Morikawa3, Kotaro Natori4, Takuya Hoshii4, Kuniyuki Kakushima4, Hitoshi Wakabayashi4, Kouichi Hayashi5, Fumihiko Matsui6, and Toyohiko Kinoshita2

1Institute of Innovative Research, Tokyo Institute of Technology, Japan; 2 Japan Synchrotron Radiation Research Institute (JASRI), Japan; 3 Osaka University, Japan; 4School of Engineering, Tokyo Institute of Technology, Japan; 5Nagoya Institute of Technology, Japan; 6 Nara Institute of Science and Technology, Japan

Mar. 8

11:15

S01-02

Junction profiling on hot carrier stressed device by dual lens electron holography and scanning capacitance microscopy

Y.Y. Wang 1, J. Nxumalo1, D. Ioannou1, A. Katnani1, J. Jeon1, K. Bandy1, M. Mcdonald1, J. Bruley2

1. Globalfoundires Inc., USA; 2. IBM T. J. Watson Research Center, USA

Mar. 8

11:30

S01-03

Characterizing Junction Profiles in Ge Photodetectors using Scanning Capacitance Microscopy (SCM) and Electron Holography

J. N. Nxumalo1, Y.Y. Wang2, M. Iwatake2, C. Molella1, A. Katnani2, J. Orcutt3, J. Ayala2, K. Nummy2

1GlobalFoundries Inc., USA;2GlobalFoundries Inc., USA;3 IBM Thomas J. Watson Research Center, USA

Mar. 8

11:45

S01-04

Effect of Stress on Activation during the Formation of np Junction in Co-Implanted Germanium

Nur Nadhirah Rashid1, Umar Abdul Aziz1, Siti Rahmah Aid1, Suwa Akira2, Hiroshi Ikenoue2, Fang Xie3 and Anthony Centeno4

1Universiti Teknologi, Malaysia;2Kyushu University, Japan;3Imperial College London, United Kingdom;4Xi’an Jiaotong Liverpool University, China

Mar. 8

13:30

S02-01

Activation of High-temperature-implanted Phosphorus Atoms in 4H-SiC by Atmospheric Pressure Thermal Plasma Jet Annealing

H. Hanafusa and S. Higashi

Hiroshima University, Japan

Mar. 8

14:00

S02-02

Activation Trends in Millisecond Annealing of Heavy n-Type Doping of Silicon

Paul J. Timans

Mattson Thermal Products GmbH, Germany

Mar. 8

14:30

S02-03

Damage recovery and strain induced by Phosphorous in Laser Annealed Ge

S. Boninelli1, and F. Cristiano2

1IMM-CNR, Italy; 2LAAS-CNRS, France

Mar. 8

15:00

S02-04

High Activation Reaching Supersaturation Achieved by Short-Duration Flash Lamp Annealing

Hideaki Tanimura, Kenji Inoue, Hikaru Kawarazaki, Takahiro Yamada, Kazuhiko Fuse, Takayuki Aoyama, Shinichi Kato and Ippei Kobayashi

SCREEN Semiconductor Solutions Co., Ltd., Japan

Mar. 8

15:15

Coffee Break

Mar. 8

15:30

S03-01

Au-based and Au-free Ohmic Contacts to AlGaN/GaN Structures on Silicon or Sapphire Substrates

Wenmao Li1,2, Jian Zhang3, Robert Sokolovskij1,2,4,5, Yumeng Zhu1,2, Yongle Qi1,2, Xinpeng Lin1,2, Jingyi Wu1,2, Lingli Jiang1,2, Hongyu Yu1,2

1 Southern University of Science and Technology, China; 2Shenzhen Key Laboratory of the Third Generation Semi-conductor, China; 3Fudan University, China; 4Delft University of Technology, the Netherlands; 5State Key Laboratory of Solid State Lighting, China

Mar. 8

16:00

S03-02

CMOS-Compatible Contact Technology for Si Photonics

Philippe Rodriguez1, Elodie Ghegin2, and Fabrice Nemouchi3

1Univ. Grenoble Alpes, France; 2 CEA-LETI, France; 3 STMicroelectronics, France

Mar. 8

16:30

S03-03

Characterization of b-Ga2O3 Schottky Barrier Diodes

T. Kaneko1, I. Muneta1, T. Hoshii1, H. Wakabayashi1, K. Tsutsui2, H. Iwai2, K. Kakushima1

1School of Engineering, Tokyo Institute of Technology, Japan; 2Institute of Innovative Research, Tokyo Institute of Technology, Japan

Mar. 8

16:45

S03-04

Effect of Deep Level Traps on the I-V and C-V Characteristics of InP/InGaAs Heterojunction

Man-Li Zhao, Hong-Liang Lu, Yu-Ming Zhang, Yi-Men Zhang, Xiao-Hong Zhao

Xidian University, China

Mar. 8

17:00

S03-05

The effect of ZnO Interface Passivation Layer on Leakage Current Mechanisms and Band Alignment for ZrO2/In0.2Ga0.8As Metal Oxide Semiconductor Capacitor

TongYang, Hong-liang Lu, Chen Liu, Wei-jian Yu, Yu-ming Zhang, Yi-men Zhang

Xidian University, China

Mar. 8

17:15

S03-06

Optimized transport properties of GaN MISHEMTs with thin AlN interlayer

Qianlan Hu, Sichao Li, Tiaoyang Li, Xin Wang, and Yanqing Wu

Huazhong University of Science and Technology, China

Mar. 9

8:30

S04-01

H2 PLAD Hydrogenation Process on 3D NAND Array Poly-Si Access Devices

Shu Qin

QinTek, Co., USA

Mar. 9

9:00

S04-02

Monolayer doping and other strategies in high surface-to-volume ratio silicon devices

Ray Duffy1, Noel Kennedy2, Gioele Mirabelli1, Emmanuele Galluccio1, Paul K. Hurley1,2, Justin D. Holmes2,3, and Brenda Long2

1 Tyndall National Institute, Ireland; 2 University College Cork, Ireland. 3 Trinity College Dublin, Ireland.

Mar. 9

9:30

S04-03

Enhancing Phosphorous Doping Level on Ge by Sb co-Doping with Non-Beamline Implantation Methods

Chuck Paeng, He Zhang, Bodo Kalkofen*, and YS Kim

Lam Research Corp., USA; *U. Magdeburg Otto-von-Guericke

Mar. 9

9:45

S04-04

Atomic layer deposited solid sources for doping of high aspect ratio semiconductor structures

Bodo Kalkofen1, Mindaugas Šilinskas1, Marco Lisker2, Y. S. Kim3, and Edmund P. Burte1

1 Otto von Guericke University, Germany;2 IHP, Germany;3 Lam Research Corporation, USA

Mar. 9

10:00

Coffee Break

Mar. 9

10:15

S05-01

On the manifestation of Ge Pre-amorphization Implantation (PAI) Impact on Both the Formation of Ultrathin TiSix and the Specific Contact Resistivity in TiSix/n-Si Contacts for sub-16/14 nm nodes and beyond

Jun Luoa,b, Shujuan Maoa,b, Jing Xua, Guilei Wanga, Dan Zhanga,b, Xue Luoa,b, Ningyuan Duana,b, Shi Liua, Wenwu Wanga,b, Dapeng Chena, Junfeng Lia, Chao Zhaoa,b, Tianchun Yea,b

a Institute of Microelectronics, Chinese Academy of Sciences, China; bUniversity of Chinese Academy of Sciences (UCAS), China

Mar. 9

10:45

S05-02

Novel titanium based contacts featuring ultralow contact resistivities and enhanced compatibilities to advanced CMOS technology

Hao Yu

IMEC, Belgium

Mar. 9

11:15

S05-03

Improved thermal stability of Al/TiO2/n-Ge ohmic contact by inserting single layer graphene

Yi Zhang, Genquan Han, Jiabo Chen, Yan Liu, Jincheng Zhang, and Yue Hao

Xidian University, China.

Mar. 9

11:30

S05-04

Effect of platinum interlayer on the thermal stability improvement of nickel stanogermanide

Weijun Wan1,2, Wei Ren1, Xiaoran Meng2,3, Yunxia Ping3, Xing Wei2, Zhongying Xue2, Wenjie Yu2, Miao Zhang2, Zengfeng Di2, Bo Zhang2

1Shanghai University, China;2Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, China;3Shanghai University of Engineering Science, China

Mar. 9

13:30

S06-01

Novel photodetector based on FD-SOI substrate with interface coupling effect

J. Wan1, JN. Deng1, XY. Cao1, H. B. Liu1, B. R. Lu1, Y. F. Chen1, A. Zaslavsky2, S. Cristoloveanu3 and M. Bawedin3

1Fudan University, China; 2Brown University, USA; 3IMEP-LAHC, France

Mar. 9

14:00

S06-02

Opportunities for breaking an energy generation limit of photovoltaic using multijunction and super-multijunction cells

Kenji Araki, Kan-Hua Lee, and Masafumi Yamaguchi,

Toyota Technological Institute,  Japan

Mar. 9

14:30

S06-03

Light Plastic Integrated Micro CPV Module: PIC with Three-Junction PV cells

Michihiko Takase, Masaharu Terauchi, Nobuhiko Hayashi, Hikaru Nishitani, Takuji Inohara, Youichirou Aya, Shutetsu Kanayama and Bunji Mizuno

Panasonic Corporation, Japan

Mar. 9

15:00

S06-04

Interfacial passivation by LiF or PbF2 for high efficiency perovskite solar cell

Yiqiang Zhan

Fudan University, China

Mar. 9

15:30

S06-05

Photodetector Based on Silicon-on-Insulator with High Responsivity

X. Y. Cao1,2, HB.Liu1, JN.Deng1, WS.Lin2,and J. Wan1

1Fudan University, China;2 Shanghai University of Engineering Science, China

Mar. 9

15:45

Coffee Break

Mar. 9

16:00

S07-01

Parasitic Resistance Modeling and Optimization for 10nm-node FinFET

Xicheng Duan, Peng Lu, Weicong Li, Jason C.S. Woo

University of California, USA

Mar. 9

16:15

S07-02

Simulation of Ge/(Si)GeSn Hetero-junction Tunnel FETs with Suppressed Ambipolar Current

Yongwang Zhang, Suyuan Wang, Jun Zheng, Chunlai Xue, Chuanbo Li, Yuhua Zuo, Buwen Cheng, Qiming Wang

Institute of Semiconductors, Chinese Academy of Sciences and University of Chinese Academy of Sciences

Mar. 9

16:30

S07-03

Thermal Failure and Voltage Overshoot Models for Diode Behavior under Electrostatic Discharge Stresses

Hang Li1, Yuanzhong Zhou2, Meng Miao1, Javier A. Salcedo2, Jean-Jacques Hajjar2, and Kalpathy B. Sundaram1

1University of Central Florida, USA;2Analog Devices, Inc., USA

Mar. 9

16:45

S08-01

Gate stack and Ni(SiGeSn) metal contacts formation on low bandgap strained (Si)Ge(Sn) semiconductors

D. Buca1, C. Schulte-Braucks1, N. von den Driesch1, A. T. Tiedemann1, U. Breuer2, J.M. Hartmann3, P. Zaumseil4, S. Mantl1 and Q.T. Zhao1

1Peter Grünberg Institute (PGI 9) and JARA-FIT, Forschungszentrum, Germany; 2Central Division of Analytical Chemistry (ZCH), Forschungszentrum, Germany;3 CEA-LETI, France; 4 IHP, Germany

Mar. 9

17:15

S08-02

High-performance heterojunctions based on 2D semiconductors

Mingqiang Huang, Xiong Xiong and Yanqing Wu

Huazhong University of Science and Technology, China

Mar. 9

17:45

S08-03

Highly Selective Etch of Silicon Dioxide with Tungsten Hard Mask Deposited by PVD Process

Yuanhui Fang, Jian Zhang, and Yu-Long Jiang

Fudan University, China

 

Call for Papers

(PDF)

 

Important Dates

Deadline for Camera-Ready Full-Length Paper Submission : Jan. 31, 2018

Notification of Regular Paper Acceptance: Feb. 15, 2018

Deadline for Late News Submission Extended: Jan. 31, 2018 submission at web-site

Email submission with a cover letter to iwjt@fudan.edu.cn is preferred.

 

Workshop Scope
(Papers are solicited in, but not limited to the following)

  • Doping Technology --- Ion implantation, plasma doping, gas and solid doping

  • Annealing Technology --- Rapid thermal process, laser annealing, flash annealing, SPE, lattice damage and defects

  • Junction Technology for Novel CMOS Device Structures --- Junction for SOI, strained Si, SiGe, Ge, Schottky barrier S/D MOSFET, FinFET(Tri-gate FET), and bonding junctions

  • Silicide and Contact Technology for CMOS --- Silicide materials and salicide technology, elevated S/D, low barrier contact, surface pre-treatment

  • Junction and Contact Technologies for Compound Semiconductors and Quantum Devices --- Schottky and ohmic contacts to wide bandgap compound semiconductors, junction and contact technologies for carbon nanotube, graphene, 2D material and other 2D or nano-, quantum devices, hetero-junction devices

  • Contact and Junction Technologies for Energy Harvesting Devices---solar cells

  • Characterization for Shallow Junction --- Physical and electrical characterization of ultra-shallow junction

  • Modeling and Simulation --- Modeling and simulation of ultra-shallow junction formation of CMOS

  • Equipment, Materials and Substrates for Junction Technology


 


Organized by
IEEE EDS Shanghai Chapter
IEEE EDS Japan Chapter
 

Technical Co-Sponsored by
IEEE EDS

Supported by
Fudan University



 

 

 
 

   


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