IWJT2018  Mar.8- 9, 2018 Shanghai, China

18th International Workshop on Junction Technology
Fudan University


 

 

Papers collected in IWJT have been indexed by EI database (Compendex)!

General Information
Scope
Call for Paper
Important Dates
Registration
Visa Application
Paper Format
Submission
Invited Speakers
Final Program
Best Paper Award
Access
Venue & Hotels
Committees
Contact
IWJT History
 
 
Last update:
Jan. 6, 2018



The 18th International Workshop on Junction Technology (IWJT2018) will be held on March 8 - 9, 2018 in Shanghai, China. The date for IWJT-2018 is scheduled to connect with the China Semiconductor Technology International Conference (CSTIC) 2018 which will be held on March 11-12, 2018 in Shanghai too.

The IWJT, started in 2000 and was held annually in Japan or China, is an open forum focused on the needs and interest of the community of a junction formation technology in semiconductors. At the past IWJTs, a number of eminent and experienced scientists and engineers from Asia, America, and Europe presented their latest results on junction technology. The workshop will provide a good opportunity for researchers and engineers to present their new research results, and exchange ideas with leading scientists in this field.

(IWJT 2016)

 

Call for Papers

(PDF)

 

Important Dates

Deadline for Camera-Ready Full-Length Paper Submission : Jan. 31, 2018

Notification of Regular Paper Acceptance: Feb. 15, 2018

Deadline for Late News Submission Extended: Jan. 31, 2018 submission at web-site

Email submission with a cover letter to iwjt@fudan.edu.cn is preferred.

 

Workshop Scope
(Papers are solicited in, but not limited to the following)

  • Doping Technology --- Ion implantation, plasma doping, gas and solid doping

  • Annealing Technology --- Rapid thermal process, laser annealing, flash annealing, SPE, lattice damage and defects

  • Junction Technology for Novel CMOS Device Structures --- Junction for SOI, strained Si, SiGe, Ge, Schottky barrier S/D MOSFET, FinFET(Tri-gate FET), and bonding junctions

  • Silicide and Contact Technology for CMOS --- Silicide materials and salicide technology, elevated S/D, low barrier contact, surface pre-treatment

  • Junction and Contact Technologies for Compound Semiconductors and Quantum Devices --- Schottky and ohmic contacts to wide bandgap compound semiconductors, junction and contact technologies for carbon nanotube, graphene, 2D material and other 2D or nano-, quantum devices, hetero-junction devices

  • Contact and Junction Technologies for Energy Harvesting Devices---solar cells

  • Characterization for Shallow Junction --- Physical and electrical characterization of ultra-shallow junction

  • Modeling and Simulation --- Modeling and simulation of ultra-shallow junction formation of CMOS

  • Equipment, Materials and Substrates for Junction Technology


 


Organized by
IEEE EDS Shanghai Chapter
IEEE EDS Japan Chapter
 

Technical Co-Sponsored by
IEEE EDS

Supported by
Fudan University



 

 

 
 

   


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