|
First name |
Last name |
Affiliation |
Country/region |
Session No |
Paper title |
|
Akira |
Uedono |
University of Tsukuba |
Japan |
I6-01 |
Vacancy-type defects introduced by gas cluster ion
implantation to Si probed by monoenergetic positron beams |
|
Bo |
Zhang |
Shanghai Institute of Microsystem and Information Technology |
China |
S4-01 |
Epitaxial growth and properties of NiSiGe |
|
Caroline |
Mok |
Delft University of Technology |
Netherlands |
S1-06 |
Low Pressure Chemical Vapor Deposition of PureB Layers on
Silicon for p+n Junction Formation |
|
Chan-lon |
Yang |
United Microelectronics Corp. |
Taiwan,China |
I1-01 |
Improving Device Performance and Variability for 28nm and
Beyond Low Power SoC Technology using Advanced Implant
Solutions |
|
Christopher |
Hinkle |
University of Texas at Dallas |
USA |
I4-03 |
Reduced NiPtSi Schottky barriers by controlling interface
composition and new materials incorporation |
|
Chun Yao |
Yang |
United Microelectronics Corporation |
Taiwan,China |
S2-02 |
Reduction of Thermal Induced Pattern Loading and Device
Sensitivity by Various Rapid Thermal Processing Models |
|
Cuiqin |
XU |
MINATEC Campus |
France |
S2-01 |
FDSOI: a solution to suppress boron deactivation in low
temperature processed devices |
|
Er-Xuan |
Ping |
AMAT |
USA |
I1-02 |
Two
Terminal Diode Steering Element for 3D X-Bar Memory |
|
Fuccio |
CRISTIANO |
CNRS |
France |
I6-05 |
Implantation-induced structural defects in highly activated
USJs: Boron precipitation and trapping in pre-amorphised
silicon |
|
Genquan |
Han |
National University of Singapore |
Singapore |
S1-04 |
BF2+ Ion Implantation and Dopant Activation in Strained
Germanium-Tin (Ge1-xSnx) Epitaxial Layer |
|
Hanbing |
He |
Xi
Dian |
china |
S5-01 |
The trapping effect on terahertz AlGaN/GaNresonant tunneling
diode |
|
Hiroshi |
Itokawa |
Semiconductor and Storage Products Company, Toshiba
Corporation |
Japan |
I3-01 |
Modifications of Growth of Strained Silicon and Dopant
Activation in Silicon by Cryogenic Ion Implantation and
Recrystallization Annealing |
|
Hongyu |
He |
PKU-HKUST Shenzhen-Hong Kong Institute |
China |
S7-02 |
On
the Grain Boundary Barrier Height and Threshold Voltage of
Undoped Polycrystalline Silicon Thin-Film Transistors |
|
Injo |
Ok |
SEMATECH |
USA |
I1-03 |
Conformal, Low-damage Shallow Junction Technology (Xj~5nm)
with optimized contacts for FinFETs as a Solution Beyond
14nm Node |
|
Jay |
Mody |
IBM |
USA |
I6-03 |
Scanning
Spreading Resistance Microscopy for carrier profiling beyond
32nm node |
|
Jeff |
Wu |
Taiwan Semiconductor Manufacturing Company Ltd |
Taiwan,China |
I7-01 |
Modeling Challenges of Advanced Doping Technologies |
|
Jinjuan |
Xiang |
Institute of Microelectronics, Chinese Academy of Sciences |
China |
S3-03 |
Band alignment of high-k dielectric on SiO2/Si stack |
|
John |
Borland |
None |
USA |
S1-02 |
Comparison of BF2, In, Ga, C+Ga & In+BF2 Dopant for 22nm
Node Bulk & PD-SOI HALO Implantation or Ground Plane
Back-Gate Doping for FD-SOI CMOS Technologies |
|
Julien |
Venturini |
Excico |
France |
I2-01 |
Laser Thermal Annealing: Enabling ultra-low thermal budget
processes for 3D junctions formation and devices |
|
Jun |
Chen |
Fudan university |
China |
S5-03 |
Investigation of Schottky Junction and MOS Technology for
III-V Compound Semiconductor MOSFET Application |
|
jun |
huang |
Nanjing University of Posts and Telecommunications |
china |
S7-01 |
Numerical Simulation of Static and Dynamic Operation
Performance of SOI VLT LDMOS Considering Electrical-thermal
Couple Effects |
|
Kangliang |
Wei |
Peking University |
China |
S7-04 |
Study of Carrier Transport through GexSi1-x/Si
Heterojunctions by Using 2D Monte Carlo Simulation Method |
|
Karuppanan |
Sekar |
Nissin Ion Equipment USA Inc |
USA |
I1-04 |
Application of Cluster Ion (carbon) implantation for Strain
applications |
|
Keping |
Han |
Applied Materials |
USA |
S1-01 |
A
Novel Plasma-based Technique for Conformal 3D FINFET Doping |
|
Kuan-Yu |
Chen |
National Sun Yat-Sen University |
Taiwan,China |
S6-01 |
The Effects of Block Oxide Length (Lbo) and Height (Hbo) in
a bMOS |
|
Lerong |
Fu |
Jianghan university |
china |
S1-03 |
Electroluminescence from n-Mn doped ZnO/n-GaN heterojunction
light-emitting diodes |
|
Li |
Zhang |
Toshiba Corporation |
Japan |
I6-02 |
Site-Specific and High-Spatial-Resolution Scanning Spreading
Resistance　Microscopy (SSRM) and Its Applications to
Si Devices |
|
Liang |
Li |
Xidian University |
China |
S5-02 |
An
efficient model for trap analysis in C-V measurement for
AlGaN/GaN heterostructure |
|
Masahiro |
Koike |
National Institute of Advanced Industrial Science and
Technology (AIST) |
Japan |
S3-01 |
Schottky Barrier Height Modulation of NiGe/Ge Junction by P
and Chalcogen (S, Se, or Te) Co-introduction for Metal
Source/Drain Ge nMOSFETs |
|
Meisheng |
Zhou |
SMIC |
China |
K3 |
Win-Win Collaboration to Meet the New Challenges in Advanced
Technology Research & Development |
|
Michael |
Thompson |
Cornell University |
USA |
I2-04 |
Deactivation Behavior of Thermodynamically Limited
Metastable Dopant Concentrations During Millisecond and
Sub-millisecond Thermal Processes |
|
Ming |
Liu |
IMECAS |
China |
I1-05 |
Rectifying-based RRAM crossbar array for high density
storage applications |
|
Naoto |
Horiguchi |
IMEC |
Belgium |
I3-02 |
Junction Strategy for 1x nm Technology Node with FINFET and
High Mobility Channel |
|
Paul |
Timans |
Mattson Technology, Inc., |
U.S.A. |
I2-02 |
Flat-Top Flash Annealing (TM) For Advanced CMOS Processing |
|
Peng |
Xu |
Fudan University |
China |
S3-05 |
A
novel MOSFET structure with asymmetric Schottky and P-N
junction source/drain on bulk silicon substrate |
|
Peter Folmer |
Nielsen |
Capres A/S |
Denmark |
I6-04 |
Microprobe Metrology for direct Sheet Resistance and
Mobility characterization |
|
Qing-Tai |
Zhao |
Forschungszentrum Juelich |
Germany |
I4-01 |
Planar and Nanowire Schottky Barrier MOSFETs on SOI with
NiSi and Epitaxial NiSi2 Contacts |
|
Reza |
Arghavani |
Lam Research Corporation |
U.S.A. |
I8-01 |
New Generations of Tools Sets That Enable FDSOI and 3-D
Tri-Gate Technologies |
|
Sagara |
Akihiko |
Japan |
Japan |
S2-04 |
Detection and Characterization of Residual Damage in
Low-Dose Arsenic Implanted Silicon after High-Temperature
Annealing |
|
Seiichiro |
Higashi |
Hiroshima University |
Japan |
I2-03 |
Application of Atmospheric Pressure Micro-Thermal-Plasma-Jet
to Ultra Rapid Thermal Annealing for Semiconductor Device
Fabrication |
|
Shih-Wen |
Hsu |
National Sun Yat-Sen University |
Taiwan,China |
S3-02 |
Simulation Study of Junctionless Vertical MOSFETs for Analog
Applications |
|
Shu |
Qin |
Micron Technology |
USA |
K1 |
PLAD (Plasma Doping) on 22nm Technology Node & Beyond -
Evolutionary and/or Revolutionary? |
|
Shu |
Qin |
Micron Technology, Inc. |
USA |
S1-07 |
PMOS Device Performance Improvement by using Buried Contact
Implants |
|
SHU-HUAN |
SYU |
National Sun Yat-Sen University |
Taiwan,China |
S7-05 |
Junction vs. Junctionless Vertical MOSFET by Using Partial
SOI Structure: A 2D Simulation Study |
|
Wanling |
Deng |
Jinan University |
China |
S7-03 |
Explicit Approximation of Surface Potential for
Fully-depleted Polysilicon Thin-Film Transistors |
|
Wenjie |
Yu |
Shanghai Institute of Microsystem and Information
Technology, Chinese Academy of Sciences |
China |
S3-07 |
Hole mobility enhancement of quantum-well p-MOSFETs on sSi/sSi0.5Ge0.5/sSOI
heterostructure |
|
Xiaolei |
Wang |
Institute of Microelectronics, Chinese Academy of Sciences,
Beijing 100029, China |
PR
China |
S7-06 |
Investigation of band structure at metal-gate/high-k
interface of metal oxide semiconductor device with high-k
and metal gate stack |
|
Yee-Chia |
Yeo |
National University of Singapore |
Singapore |
I4-02 |
Self-aligned Contact Metallization for III-V Channel
Field-Effect Transistors |
|
Yohei |
Hayase |
Semiconductor Company,Toshiba Corporation |
Japan |
S6-03 |
Applications of Site-Specific Scanning Spreading Resistance
Microscopy (SSRM) to Failure Analysis of Production Lines |
|
Yonggen |
He |
Semiconductor Manufacturing International Corporation |
China |
S2-03 |
Process Match between DSA and LSA for Ultra-shallow Junction
Formation |
|
Yonggen |
He |
Semiconductor Manufacturing International Corporation |
China |
S3-04 |
Investigation of groove surface induced by strain relaxation
in selective epitaxy SiGe process |
|
Yoshiki |
Nakashima |
Nissin Ion Equipment Co., Ltd. |
Japan |
S1-05 |
Phosphorous Transient Enhanced Diffusion Suppression with
Cluster Carbon Co-implantation at Low Temperature |
|
Youhei |
Miyata |
Tokyo Institute of Technology |
Japan |
S6-02 |
Soft X-ray Photoelectron Spectroscopy Study of Boron Doped
on Top Surfaces and Sidewalls of Si Fin Structures |
|
You-Ren |
Lu |
National Sun Yat-Sen University |
Taiwan,China |
S3-06 |
Short-Channel Characteristics of Self-Aligned Dual-Channel
Source/Drain-Tied MOSFETs |
|
Yuri |
Erokhin |
Applied Materials |
USA |
K2 |
Device Scaling and Performance Improvement: Advances in Ion
Implantation and Annealing Technologies as Enabling Drivers |
