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Activation of
High-temperature-implanted Phosphorus Atoms in 4H-SiC by Atmospheric
Pressure Thermal Plasma Jet Annealing |
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Hiroaki Hanafusa, Hiroshima University, Japan |
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Activation Trends in Millisecond
Annealing of Heavy n-Type Doping of Silicon |
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Paul
Timans, Mattson Thermal Products GmbH, Germany |
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Analyses of 3D atomic arrangements
of impurity atoms doped in Silicon by spectro-photoelectron
holography technique |
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Kazuo
Tsutsui, Tokyo Institute of Technology, Japan |
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Au-based and Au-free Ohmic
Contacts to AlGaN/GaN Structures on Silicon or Sapphire Substrates |
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Hong-Yu Yu, Southern University of Science and Technology, China |
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CMOS-Compatible Contact Technology
for Si Photonics |
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Philipp Rodriguez, Univ. Grenoble Alpes, France |
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H2 PLAD Hydrogenation Process on
3D NAND Array Poly-Si Access Devices |
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Shu
Qin, QinTek, Co., USA |
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Monolayer doping and other
strategies in high surface-to volume-ratio silicon devices |
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Ray
Duffy, Tyndall National Inst., Ireland |
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Novel photodetector based on
FD-SOI substrate with interface coupling effect |
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Jing
Wan, Fudan University, China |
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Novel titanium based contacts
featuring ultralow contact resistivities and enhanced
compatibilities to advanced CMOS technology |
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Hao
Yu, IMEC, Belgium |
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On the manifestation of Ge
Pre-amorphization Implantation (PAI) Impact on Both the Formation of
Ultrathin TiSix and the Specific Contact Resistivity in TiSix/n-Si
Contacts for sub-16/14 nm nodes and beyond |
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Jun
Luo, IMECAS, China |
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Opportunities for breaking an
energy generation limit of photovoltaic using multijunction and
super-multijunction cells |
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Kenji
Araki , Toyota Technological Institute, Japan |
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Light Plastic Integrated Micro CPV
Module: PIC with Three-Junction PV cells |
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Michihiko Takase, Panasonic Corporation, Japan |
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Gate stack and Ni(SiGeSn) metal
contacts formation on low bandgap strained (Si)Ge(Sn) semiconductors |
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Dan
Buca, Peter Gr┨nberg Institute (PGI 9) and JARA-FIT, Germany |
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High-performance heterojunctions
based on 2D semiconductors |
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Yanqing Wu, Huazhong University of Science and Technology, China |
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Damage recovery and strain induced
by Phosphorous in Laser Annealed Ge |
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Simona Boninelli, IMM-CNR, Italy |
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Interfacial passivation by LiF or
PbF2 for high efficiency perovskite solar cell |
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Yiqiang Zhan, Fudan University, China |
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